Page 22 - REC :: B.E. BME Curriculum and Syllabus - R2019

Department of BME, REC

UNIT II RESONANCE AND TRANSIENT RESPONSE IN DC CIRCUITS 12
Series and parallel resonance –frequency response – Quality factor and Bandwidth,
Transient response of RL, RC and RLC Circuits using Laplace transform for DC input

UNIT III BASIC PN JUNCTION DEVICES 12
PN junction diode, current equations, energy band diagram, diffusion and drift current
densities, forward and reverse bias characteristics, NPN & PNP Configurations of BJT -
operations-Early effect-current equations – input and output characteristics of CE, CB, CC.

UNIT IV FET & SPECIAL SEMICONDUCTOR DEVICES 12
JFET–drain and transfer characteristics,-current equations-Pinch off voltage and its
significance- MOSFET- threshold voltage -channel length modulation, DUAL GATE
MOSFET- -Zener diode-Varactor diode –Tunnel diode-, LED and seven segment display,
LASER diode, LDR – Characteristics curve and its advantages

UNIT V HIGH POWER DEVICES AND CIRCUITS 12
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS, Three phase balanced
/ unbalanced voltage sources – analysis of three phase 3-wire and 4-wire circuits with star
and delta connected loads, balanced & unbalanced

LAB EXPERIMENTS:
1. VI characteristics of PN junction diode
2. VI characteristics of Zener Diode
3. Input and output characteristics of Common emitter configuration
4. Input and output characteristics of Common emitter configuration
5. Drain and transfer characteristics of FET
6. Verification of KVL and KCL
7. Verification of super position theorem
8. Verification of Thevien theorem and Nortons theorem
9. RC and RL transients
10. Series and parallel resonance

TOTAL: 90 PERIODS
OUTCOMES:
After completion of this course, the student will be able to:
• Realise the working of DC and AC circuits
• Analyse the transient response of DC and AC Circuits
• Analyze the BJT terminal characteristics and its utilization in circuit models
• Analyze the characteristics of FETs and special semiconductor devices for their
suitable applications
• Realise the concepts of high power devices and three phase AC circuits

TEXT BOOKS:
1. Donald A Neaman, “Semiconductor Physics and Devices”, Fourth Edition, Tata Mc
GrawHill Inc. 2012.
2. William H. HaytJr, Jack E. Kemmerly and Steven M. Durbin, “Engineering Circuits
Analysis”, Tata McGraw Hill publishers, 6th edition, New Delhi, 2003.

R 2019 Curriculum & Syllabus/ B.E Biomedical Engineering Page 22