Page 112 - 30105-2003 การวิเคราะห์วงจรอิเล็กทรอนิกส์ความถี่สูง

104
2.

V o g Z R
m out GG
A V (F ) = − = −
H
E g ( R + R GG )
g
( R + R GG ) + JR R
g GG
g
R R
g GG
V o g Z R
m out GG
A V (F H ) = − = − )
E g ( R + R GG ) + J ( R + R GG
g
g
g Z R
m out GG
A V (F ) = −
H ( R + R GG )(1 J+ ) 1
g
V o
A V (F H ) = −
E
g
g Z R
m out GG
A = −
V (F H ) 1
( R + R GG ) ( ) 1 2 + ( ) 1 2 tan − 1
g
1
g Z R
m out GG
A V (F H ) = −
45
( R + R GG ) 2
g

0 −
0.707g Z R
45
m out GG
A = −
V (F H ) )
( R + R GG
g
R GG − 45
A V (F H ) = − 0.707g Z × )
m out
( R + R GG
g
V o R GG
(
- ก A V (F ) = − = − g Z ×
m out
Mid
E g ( R + R GG )
g
V o − 45
A V (F H ) = − = 0.707A V (F Mid )

$
E g (2.58a)
,
2.30 ก ,% 2.21 , A V (F H )
V o
- .
ก ก (2.58a) A V (F ) = − = 0.707A V (F ) − 45
H
E g Mid
V o
A V (F ) = − = (0.707 )( 2.095− ) = − 1.481 − 45
H
E g
V o − −− −
== =
= − −− −
A V (F H ) = − −− − E g == = 1.481 45
2.2.5 ก
ก(

&

+#
Q ( (/ (! 2SK33 !!' ( +
(EGC 451)
1
Ω
C = 5 pF,C = 1.2 pF,V = − 4 V, I = 4-10 mA, BV = − 25 V, R = 75 ,
iss rss P DSS GSS g
P = 310 mW,V DD = 20 V, R = 1.5 k , F ≤ 1 MHz, F ≥ 250 MHz;( - ก I DSS = 8 mA
Ω
L
L
H
D
ก

ก
ก