Page 146 - 30105-2003 การวิเคราะห์วงจรอิเล็กทรอนิกส์ความถี่สูง

138

3.

9
< & ก
!8 ! ! ก "
+;
ก
! % ! ! 8 % ($ C ก
b c ′

C = ( ) n C (3.21)
b c ′
n
r bb′ (C b e ′ + C b c ′ )
R = (3.22)
n
( ) n C b c ′
N
, n = 12 T
2
N 32
"#
3.13 ก + 3.14 + %! 9 R % C
n
n
- ,
ก !ก (3.21) C = ( ) n C b c ′ = 5 0.5 10 − 12 = 2.5 pF
×
×
n
×
5 4.675 10
r bb′ (C b e ′ + C b c ′ ) ( × − 12 + 0.5 10 − 12 )
ก !ก (3.22) R = = = 10.35 Ω
n
×
×
( ) n C b c ′ 5 0.5 10 − 12
Ω
Ω Ω Ω
" C = == = 2.5 pF, R = == = 10.35 ;
n n

3.6 ก
ก

@A

+ "
#

*

Q 1 2SC930NP,V CBO = 30 V,V CEO = 20 V,V EBO = 5 V, I C (MAX) = 30 mA, P = 250 mW,
D
Ω
β = β = 120,V = 0.6 V, F = 300 MHz, C = C = 1.3 pF, r = 2 ;
F o BE T re ob bb′

a
L 12 , N 12 T 2
L 22 , N 22 b
L 32 , N 32 L 22
N 22 N 32
L 11 , N 11 L 21 , N 21 T 2 L 12 N 12 L 32

T 1 T 1
Q 1
L 11 L 21 V
N 11 N 21 o
E
g

T N : N = 1:1,L = 1.90 µH, L = 1.90 µH;
1 11 21 11 21
T 2 N 22 : N 12 : N 32 = 10 :5:1,L 22 = 238 µH, L = 59.5 µH, L 32 = 2.38 µH;
12

+ 3.16
, "-
.( & (
'
ก

ก
ก