Page 150 - 30105-2003 การวิเคราะห์วงจรอิเล็กทรอนิกส์ความถี่สูง

142

3.

C BB = C BP 1 = 0.636 µF +;
9 ! & D
C BB = C BP 1 = 0.68 µF
!

3.6.7 ก
"
+
A
V (F R )
β
ก !ก (1.10) r b e ′ = o
g
m
2
r N 11
b e ′
r b ep =
′
N 2 21
I I
c
d
c
d
ก !ก (1.9) g = C ( ) = C ( )
m )
V (k T q
T B
V o g R N 12 r b ep N 21
′
m L
ก !ก (3.20) A V (F R ) = = × ×
E
′
g
g N 32 R + r b ep N 11
% "
9"
+ (dB)
"#
3.18 ก & 9 A V (F R )
I I 10.227 10 − 3
×
( )
( )
- ,
ก !ก (1.9) g = C dc = C dc = = 397.937 mS
m ) − 3
V (k T q ×
T B 25.7 10
β 120
ก !ก (1.10) r b e ′ = o = = 301.555 Ω
g × − 3
m 397.937 10
2 2
r N 11 301.555× ( ) 1 301.555 Ω
b e ′
r b ep = = =
′
N 2 ( ) 1 2
21
V o g R N 12 r b ep N 21
′
m L
!ก (3.20) A V (F R ) = = × ×
E
′
g
g N 32 R + r b ep N 11
−
×
397.937 10 × 75 5 301.555 1
×
3
× =
A V (F R ) = 1 × 75 301.555 1 119.504
+
=
A V (F R ) (dB) 20 log 10 119.504 = 41.547 dB
= = =
=
" A V (F R ) = = = = 119.504, A V (F R ) (dB) 41.547 dB;
3.6.8 ก
$

'
C C
BT CT
ก
!8 ,.

.' T % T ! 9 500 kHz
' ( ' 50 kHz
1 2
T 1 N 11 : N 21 = 1:1, L = 1.90 µH, L = 1.90 µH;
21
11
T 2 N 22 : N 12 : N 32 = 10:5:1, L 22 = 238 µH, L = 59.50 µH, L 32 = 2.38 µH;
12
, F !8 ,.

.' &
9 L ! 9 !8 500 kHz
( R L 11 ) 11
F !8 ,.

.' &
9 L ! 9 !8 500 kHz
( R L 12 ) 12
ก + %! 9 C +;
%& C ก L ก +;
C + กN
′
BT b e ′ 21 b eP
L .#

ก C
BT
11
ก

ก
ก