Page 190 - 30105-2003 การวิเคราะห์วงจรอิเล็กทรอนิกส์ความถี่สูง

182
4.

1 1
F = = = 7.706 MHz
H
π
×
×
×
×
2 R FH C T 2 3.14 76.235 271.036 10 − 12

×

1 +% 2 2F= H = 2 7.076 10 = 14.152 MHz
6
×

* F H = == = 7.706 MHz .5(
1 +% 2 4% 14.152 MHz

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2
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2 ก 250 kHz 1 500 kHz $% ก
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F = 30 kHz, I D 1 = I D 2 = 5 µA, R ≥ 100R C , R = 620 Ω, V CC = 12 V, R = 75 ,T = 25 C .5(
Ω

L
C
A
g
L
E = 25 mV peak ,;
i
V CC = 12 V
+V R C
V max R 1 +V
C C V max
t R B1
0 π 2π 3π
0
T NPN C T π 2π 3π
− V C B B Q 1 − V
R 2
E
R g
C E
E g E i R L V o
R B2
R E
250 kHz
500 kHz

D 1 , D 2 1N4148 t = 4 ns,V = 0.6 V, I = 200 mA,V = 75 V,V RRM = 100 V;
rr
R
F
F
Q 2SC930 V = 30 V,V = 20 V,V = 5 V, I = 30 mA, P = 120-250 mW,
1 CBO CEO EBO C (MAX) D
β = β = 88,V BE = 0.6 V, F = 300 MHz,C ob = C = 1.3 pF, r bb′ = 2 ; Ω
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re
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