Page 30 - 30105-2003 การวิเคราะห์วงจรอิเล็กทรอนิกส์ความถี่สูง

22
1. !!" # $
%&

1.2.3.2 % -. / ก

- ก! 1.6 '( 1.12 V = 0.9-1.1 V ก 1.1 V
F
1.2.3.3 3 %& %

- ก! 1.6 C &
& ' 0 V -( C 0 :-
D
D
R
− C = 570 fF,V = 0; '( C = 400 fF,V = 1 V;
D
R
D
R
− C = 270 fF,V = 5 V; '( C = 200 fF,V = 20 V;
R
R
D
D
600
T = 25 C, F = 1 MHz;

A
500
C ≈ C ≈ 275 fF,V = 5 V;
575 fF,V =
0;
D
R
-Capacitance (fF) 300 D R
400
D 200 C ≈ 210 fF,V =
C D R 20 V;
100
0
0 5 10 15 20

1.13 0 0 j (+ C ก0, V
0
R
D
- ก 1.13 '(& 0 :-
− C ≈ 575 fF,V = '( C ≈ 210 fF,V = 20 V;
0;
D
R
D
R
− C ≈ 275 fF,V = 5 V;
R
D
1000
T = 25 C, F = 100 MHz;

A
) 100 r ≈ 40 ,I = 1 mA;
-Forward Resistance (Ω
Ω
F
D

Ω
F
D
D 10 r = 5 ,I = 10 mA;
r
r ≈ 1.4 , I = 100 mA;
Ω
F
D
1
0.1 1 10 100

1.14 0 0 j (+ r ก0,ก ( I (BAP51-03, 2006: 3)
F
D
ก

ก
ก