Page 29 - 30105-2003 การวิเคราะห์วงจรอิเล็กทรอนิกส์ความถี่สูง

21
1. !!" # $
%&

1.2.3 ก4 ' %& %

! 1.6 '0ก1 ( ))2 / $ "

'0ก1 ( ))2 +W $" , 25 C

'0ก1 ( &
/ , 05'0ก1 ! * !0 +
ก ( ! ก'0, V = 30 V I - - 20 nA
R
R
0 + ก ( ! I = 50 mA V - 0.9 1.1 V
F
F
V = 0, f =1 MHz; - 570 -
R
V = 1 V, f =1 MHz; - 400 -
- " R C fF
V = 5 V, f =1 MHz; D - 270 -
R
V = 20 V, f =1 MHz; - 200 -
R
I = 0.5 mA, f =100 MHz; - 70 100
F
! + / " I = 1 mA, f =100 MHz; - 40 50
F
(Diode Forward Resistance) I = 10 mA, f =100 MHz; r - 5 7 Ω
D
F
I = 100 mA, f =100 MHz; - 1.4 1.9
F
& ' )pq !0 ก'0, / " I =10 mA, I = 6 mA; t - 1.25 - µs
R
rr
F
&+ * ก - 1.5 -
(Series Inductance) I = 100 mA, f =100 MHz; L nH
S
F
+ &+! !0 &'/ ! & . ก!0 ก j$,
1.2.3.1 ก

ก

- ก! 1.6 I = 20 nA , V = 30 V 0 1.11
R
R
A
I R = 20 nA
V = 30 V
R
D 1

1.11 ก , ก'0, '(ก 0 ก ( I / $ "
R

A
I F = 50 mA
V = 0.9-1.1 V
D 1 F

1.12 ก , + '(ก 0 ก ( I / $ "
F

ก

ก
ก