Page 136 - 30105-2003 การวิเคราะห์วงจรอิเล็กทรอนิกส์ความถี่สูง

128

3.

( )
R N 2 1 75 10 2
L
R LP = 2 = 2 = 1,875 Ω
N ( ) 2
2

!!

&9 E

g

E g L 1 L 2

N N 2
1
Ω
C = 2.8 pF,R = 1.875 k ,C = 2.15 nF % L = 112.54 nH
2P LP 1 1
+ 3.8 !!

&9 E
g

(
'
.
'
1
ก !ก (3.2) B =
W
π
2 CR
×
1.875 75
, C = C + C 2P = 2,152.8 pF, R = ( R LP R g ) = = 72.115 ;
Ω
1
+
1.875 75
1 1
B = =
W 2 R C + C 2P ) 2 3.14 72.115 2,152.8 10 − 12
π
×
×
×
×
( 1
B = 1.025 MHz
W
" B = == = 1.025 MHz
W

3.4 . * $ ก 1$ (Tapped Transformer)
L 2 , N 2
L , N L 3 , N 3
E 1 1
g

+ 3.9
"-
! + 8 ก ?+

ก + 3.9 &

L
$
8 ก ?+ ก +;
&

L .# &

L +;

2 1 1
+D!3 !(&

L % L +;
)&( 3 !(
2
3

"#
3.7 ก + 3.9 ก
L = 100.925 nH, L = 403.7 nH, L = 16.148 nH, N = 5 T,
1
3
2
1
N = 10 T, N = 2 T, C = 600 pF, C = 70 pF, R = R = 75 ; + %! 9
Ω
2
3
g
L
1
2
ก

ก
ก